Study of plasma etching of silicon carbide
Etching is a very crucial process in the fabrication of SiC microelectronic devices. Due to its exceptional chemical inertness, plasma etching is the only practical means of etching SiC. With more stringent requirements placed on the etch rate, etching profiles, surface quality for advanced SiC devi...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/42362 |
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| Institution: | Nanyang Technological University |
| Language: | English |