Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...

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Bibliographic Details
Main Author: Tan, Dexter Xueming.
Other Authors: Pey Kin Leong
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10356/49978
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Institution: Nanyang Technological University
Language: English

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