Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement
The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...
Saved in:
Main Author: | Tan, Dexter Xueming. |
---|---|
Other Authors: | Pey Kin Leong |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/49978 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Formation of silicided hyper-shallow p+/n- junctions by pulsed laser annealing
by: Pey, K.L., et al.
Published: (2014) -
Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs
by: Liu, F., et al.
Published: (2014) -
Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies
by: Ong, Kuang Kian
Published: (2010) -
Pulsed laser annealed silicides formation for advanced MOS applications
by: Yudi, Setiawan.
Published: (2009) -
Impact of spike anneal on ultra shallow junction formation
by: Lai, Chung Woh
Published: (2008)