Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs

Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs

A simple high frequency channel thermal noise model was developed for MOSFETs in strong inversion region. Short channel effects such as channel length modulation effect and mobility degradation due to vertical field were taken into account in the current-voltage model and channel thermal noise...

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書目詳細資料
Main Authors:	Ong, Shih Ni, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Chan, Lye Hock, Loo, Xi Sung, Do, Manh Anh, Boon, Chirn Chye
其他作者:	School of Electrical and Electronic Engineering
格式:	Conference or Workshop Item
語言:	English
出版:	2010
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	https://hdl.handle.net/10356/79245 http://hdl.handle.net/10220/6354 http://www.isic2009.org/ http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403708&queryText%3DAnalytical+High+Frequency+Channel+Thermal+Noise+Modeling+in+Deep+Sub-micron+MOSFETs%26openedRefinements%3D*%26searchField%3DSearch+All
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機構:	Nanyang Technological University
語言:	English

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