Gold-free contacts on Al
x
Ga
1-x
N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

The authors report on the fabrication and characterization of low-temperature processed gold-free Ohmic contacts for AlxGa1−xN/GaN high electron mobility transistors (HEMTs). The HEMT structure grown on a 200-mm diameter Si(111) substrate is used in this study. Using the Ti/Al/NiV metal stack scheme...

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Bibliographic Details
Main Authors:	Tham, Wai Hoe, Ang, Diing Shenp, Bera, Lakshmi Kanta, Surani Bin Doimanan, Bhat, Thirumaleshwara N., Kajen, Rasanayagam S., Tan, Hui Ru, Teo, Siew Lang, Tripathy, Sudhiranjan
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2018
Subjects:	Electrical Resistivity DRNTU::Engineering::Electrical and electronic engineering Aluminium
Online Access:	https://hdl.handle.net/10356/89018 http://hdl.handle.net/10220/47018
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Institution:	Nanyang Technological University
Language:	English

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