Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack

Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack

In this work, we present a comprehensive experimental study of charge loss mechanisms in a dual-layer metal nanocrystal (DL-MNC) embedded high-κ/SiO2 gate stack. Kelvin force microscopy characterization reveals that the internal-electric-field assisted tunneling could be a dominant charge loss mecha...

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書目詳細資料
Main Authors:	Lwin, Z. Z., Pey, Kin Leong, Zhang, Q., Bosman, Michel, Liu, Q., Gan, C. L., Singh, P. K., Mahapatra, S.
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
在線閱讀:	https://hdl.handle.net/10356/94266 http://hdl.handle.net/10220/9128
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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