Novel heterogeneous integration technology of III-V layers and InGaAs FinFETs to silicon

• Main Authors: Dai, Xing, Nguyen, Binh-Minh, Hwang, Yoontae, Soci, Cesare, Dayeh, Shadi A.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/98217; http://hdl.handle.net/10220/19623
• Institution: Nanyang Technological University

Heterogeneous integration of III–V compound semiconductors to Si substrates is regarded as a necessary step for advancing high-speed electronics and hybrid optoelectronic systems for data processing and communications, and is extensively being pursued by the semiconductor industry. Here, an innovati...