Contact and source/drain engineering for advanced III-V field-effect transistors

Contact and source/drain engineering for advanced III-V field-effect transistors

Ph.D

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Bibliographic Details
Main Author:	KONG YU JIN EUGENE
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2014
Subjects:	High-mobility, III-V, InGaAs, MOSFET, Contact, Doping
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/107389
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

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