Intra-level dielectric reliability in deep sub-micron copper interconnects
Master's
Saved in:
Main Author: | NGWAN VOON CHENG |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/14158 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects
by: Ngwan, V.C., et al.
Published: (2014) -
Reliability improvement using buried capping layer in advanced interconnects
by: Yiang, K.Y., et al.
Published: (2014) -
Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatments
by: Krishnamoorthy, A., et al.
Published: (2014) -
Impact of buried capping layer on TDDB physics of advanced interconnects
by: Yiang, K.Y., et al.
Published: (2014) -
Gate dielectric degradation mechanism associated with DBIE evolution
by: Pey, K.L., et al.
Published: (2014)