Digital etch technique for forming ultra-scaled germanium-tin (Ge 1-x Sn x) fin structure
10.1038/s41598-017-01449-1
Saved in:
Main Authors: | Wang, W, Lei, D, Dong, Y, Gong, X, Tok, E.S, Yeo, Y.-C |
---|---|
Other Authors: | DEPT OF ELECTRICAL & COMPUTER ENGG |
Format: | Article |
Published: |
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/178324 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Thermal stability of germanium-tin (GeSn) fins
by: Lei, Dian, et al.
Published: (2018) -
Strain relaxation of germanium-tin (GeSn) fins
by: Kang, Y, et al.
Published: (2020) -
Strain relaxation of germanium-tin (GeSn) fins
by: Kang, Yuye, et al.
Published: (2018) -
Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate
by: Lei, Dian, et al.
Published: (2020) -
Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation
by: Guo, P., et al.
Published: (2014)