Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures

Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures

10.1149/2.0131711jss

Saved in:

Bibliographic Details
Main Authors:	Chang, T.-F, Chang, C.-Y, Huang, C.-F, Liang, Y.C, Samudra, G.S, Lin, R.-M
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Editorial
Published:	Electrochemical Society 2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183553
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016)

AlGaN/GaN power HEMT devices for future energy conversion applications
by: Liang, Y.C., et al.
Published: (2014)

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
by: Wang, Y.-H., et al.
Published: (2014)

Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
by: Huang, H., et al.
Published: (2014)

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
by: Huang, H., et al.
Published: (2014)

Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devices
by: Samudra, G.S., et al.
Published: (2014)

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
by: Huang, H., et al.
Published: (2014)

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
by: Jia, Y., et al.
Published: (2021)

Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTs
by: Li, Y., et al.
Published: (2014)

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures
by: Huang, H., et al.
Published: (2014)

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
by: Wang, Y.-H., et al.
Published: (2014)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

Characterization and analysis of AlGaN/GaN HEMTs on Si for high frequency application
by: Pang, Vanessa Du Juan
Published: (2017)

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
by: Agrawal, M., et al.
Published: (2011)

Investigation of Rh-based Schottky electrode on AlGaN/GaN heterostructure
by: Tian, F., et al.
Published: (2014)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
by: Yin, W.-Y., et al.
Published: (2014)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
by: Vicknesh, S., et al.
Published: (2014)

Effect of the (1010) crystal orientation on the optical gain of wurtzite GaN-AlGaN quantum-well lasers
by: Yeo, Y.C., et al.
Published: (2014)

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers
by: Yeo, Y.C., et al.
Published: (2014)

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
by: Yeo, Y.C., et al.
Published: (2014)

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells
by: Sun, W.H., et al.
Published: (2014)

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
by: Anand, M. J., et al.
Published: (2015)

Electronic structures of AlGaN2 nanotubes and AlN-GaN nanotube superlattice
by: Pan, H., et al.
Published: (2014)

Material characterization of AlGaN/GaN based HEMT structures
by: Nur Hidayat Bin Hatwi
Published: (2014)

Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond
by: Kumud Ranjan
Published: (2020)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
by: Whiteside, Matthew, et al.
Published: (2021)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
by: Liu, Siyu, et al.
Published: (2024)

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
by: Liu, W., et al.
Published: (2014)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI
by: Gao, Yu
Published: (2021)

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
by: Manvi Agrawal
Published: (2013)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
by: Whiteside, Matthew David
Published: (2021)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
by: Wang, H.T., et al.
Published: (2014)

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
by: Teo, Y. C., et al.
Published: (2013)

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
by: Yuan, Li, et al.
Published: (2013)

AlGaN/GaN HEMT based gas sensor characterisation and measurement
by: Ng, Ting Siang
Published: (2018)

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
by: Dolmanan, S. B., et al.
Published: (2013)

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
by: Ravikiran, L., et al.
Published: (2015)

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
by: Hou, Yong Tian, et al.
Published: (2014)