Transfer learning-based artificial intelligence-integrated physical modeling to enable failure analysis for 3 nanometer and smaller silicon-based CMOS transistors
10.1021/acsanm.1c00960
Saved in:
Main Authors: | JIEMING PAN, LOW KAIN LU, JOYDEEP GHOSH, Senthilnath Jayavelu, Md Meftahul Ferdaus, Shang Yi Lim, Evgeny Zamburg, Li Yida, TANG BAOSHAN, WANG XINGHUA, LEONG JIN FENG, Savitha Ramasamy, Tonio Buonassisi, Tham Chen Khong, THEAN VOON YEW, AARON |
---|---|
Other Authors: | COLLEGE OF DESIGN AND ENGINEERING |
Format: | Article |
Language: | English |
Published: |
ACS Applied Nano Materials
2022
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/218176 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
TCAD MODELLING AND CHARACTERIZATION OF DEFECTS IN ADVANCED NANOSCALE SEMICONDUCTOR DEVICES
by: TEO CHEA WEI
Published: (2019) -
A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET
by: Shen, C., et al.
Published: (2014) -
Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
by: Zhao, H., et al.
Published: (2014) -
Fabrication, characterization, and modeling of silicon multi-gate devices
by: ZHAO HUI
Published: (2010) -
Advanced source and drain contact engineering for multiple- gate transistors
by: LEE TEK PO RINUS
Published: (2010)