Advanced Transistors for Supply Voltage Reduction: Tunneling Field-Effect Transistors and High-Mobility MOSFETS
Ph.D
Saved in:
Main Author: | GUO PENGFEI |
---|---|
Other Authors: | NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/43733 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
THEORETICAL STUDY OF ADVANCED FIELD-EFFECT TRANSISTORS BASED ON ALTERNATIVE CHANNEL MATERIALS FOR SUPPLY VOLTAGE REDUCTION
by: LOW KAIN LU
Published: (2015) -
Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
by: YANG YUE
Published: (2013) -
Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
by: Toh, E.-H., et al.
Published: (2014) -
Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
by: Yang, Y., et al.
Published: (2014) -
Fabrication and Characterization of Tunneling Field Effect Transistors (TFETs)
by: YANG LITAO
Published: (2011)