Drive-current enhancement in FinFETs using gate-induced stress
10.1109/LED.2006.880657
Saved in:
Main Authors: | Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55697 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014) -
N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
by: Lee, R.T.P., et al.
Published: (2014) -
N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
by: Liow, T.-Y., et al.
Published: (2014) -
Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scaling
by: Zhao, H., et al.
Published: (2014) -
Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
by: Tan, K.-M., et al.
Published: (2014)