Temperature dependence of carrier transport of a silicon nanowire schottky-barrier field-effect transistor
10.1109/TNANO.2008.2003353
Saved in:
Main Authors: | Yang, W.F., Lee, S.J., Liang, G.C., Eswar, R., Sun, Z.Q., Kwong, D.L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57603 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
by: Zhu, S., et al.
Published: (2014) -
Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors
by: Jiang, Y., et al.
Published: (2014) -
Characterization of silicon nanowire embedded in a mems diaphragm structure within large compressive strain range
by: Lou, L., et al.
Published: (2014) -
Characterization of piezoresistive-Si-nanowire-based pressure sensors by dynamic cycling test with extralarge compressive strain
by: Lou, L., et al.
Published: (2014) -
A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
by: Wang, T., et al.
Published: (2014)