SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Saved in:
Main Authors: | Ling, C.H., Kwok, C.Y., Prasad, K. |
---|---|
其他作者: | ELECTRICAL ENGINEERING |
格式: | Article |
出版: |
2014
|
在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/62763 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture
由: Lim, S.F., et al.
出版: (2014) -
Structural and optical properties of a-Si:H/nc-Si:H thin films grown from Ar-H2-SiH4 mixture by plasma-enhanced chemical vapor deposition
由: Wang, Y.H., et al.
出版: (2014) -
INDUSTRIAL DEPOSITION OF SILICON NITRIDE ON MC-SI FOR SOLAR CELL PRODUCTION EMPLOYING MICROWAVE PECVD
由: WU RUIHONG
出版: (2019) -
Structural study of plasma enhanced chemical vapour deposited silicon carbide films
由: Choi, W.K., et al.
出版: (2014) -
RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
由: Ling, C.H., et al.
出版: (2014)