Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors

Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors

10.1117/12.2020248

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Bibliographic Details
Main Authors: Chin, H.-C., Liu, B., Zhang, X., Ling, M.-L., Yip, C.-H., Liu, Y., Hu, J., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Ellipsometry
FinFET
Germanium
III-V
OCD
Optical critical dimension
Scatterometry
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70923
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Institution: National University of Singapore

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