Optimal geometry for GeSi/Si super-lattice structure RBS investigation

Optimal geometry for GeSi/Si super-lattice structure RBS investigation

10.1016/S0168-583X(01)01218-6

Saved in:

書目詳細資料
Main Authors:	Wielunski, L.S., Osipowicz, T., Teo, E.J., Watt, F., Tok, E.S., Zhang, J.
其他作者:	PHYSICS
格式:	Conference or Workshop Item
出版:	2014
主題:	Channeling Depth resolution GeSi/Si super-lattice Glancing angle detection He RBS Muliple scattering
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/77474
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopy
由: Seng, H.L., et al.
出版: (2014)

Investigation of electrical properties of furnace grown gate oxide on strained-Si
由: Bera, L.K., et al.
出版: (2014)

High-resolution channeling contrast microscopy of compositionally graded Si1-XGeX layers
由: Seng, H.L., et al.
出版: (2014)

Micro-RBS study of nickel silicide formation
由: Seng, H.L., et al.
出版: (2014)

The CIBA high resolution RBS facility
由: Osipowicz, T., et al.
出版: (2011)

The CIBA high resolution RBS facility
由: Osipowicz, T., et al.
出版: (2014)

N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD
由: Tan, C.S., et al.
出版: (2014)

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs
由: Yu, D.S., et al.
出版: (2014)

Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel
由: Jiang, Y., et al.
出版: (2014)

Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
由: Jiang, Y., et al.
出版: (2014)

Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates
由: Yu, D.S., et al.
出版: (2014)

Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure
由: Gao, F., et al.
出版: (2014)

The DFT Study of Electronic and Optical Properties of the Surface Functional SiGe, GeSn and GeSn Nanostructures
由: Roohan Thirayatorn, et al.
出版: (2020)

Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films
由: Natarajan, A., et al.
出版: (2014)

Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
由: Jiang, Y., et al.
出版: (2014)

Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe
由: Wong, L.H., et al.
出版: (2014)

SiGe bandgap tuning for high speed eam
由: Mastronardi, Lorenzo, et al.
出版: (2019)

Selective EPI process for advanced CMOS devices
由: CHOI KYU JIN
出版: (2010)

Direct Si-Si bonding through self-assembled monolayers
由: Eow, Desmond Fu Shen
出版: (2016)

Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire
由: Whang, S.J., et al.
出版: (2014)

Quantitative studies of copper diffusion through Ultra-thin ALD tantalum nitride barrier films by high resolution-RBS
由: Ho, C.S., et al.
出版: (2014)

A 3 × 2 waveguide switch based on SiGe for C-band operation
由: Teng, J.H., et al.
出版: (2014)

Novel devices for enhanced CMOS performance
由: CHUI KING JIEN
出版: (2011)

HRBS/channeling studies of ultra-thin ITO films on Si
由: Malar, P., et al.
出版: (2014)

One-dimensional semiconductor nanowires for future nano- scaled application
由: WHANG SUNG JIN
出版: (2010)

Optical investigations using ultra-soft pseudopotential calculations of Si0.5Ge0.5 alloy
由: Al-Douri, Y., et al.
出版: (2014)

High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
由: Bera, L.K., et al.
出版: (2014)

Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
由: Loh, W.-Y., et al.
出版: (2014)

Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
由: Tan, K.-M., et al.
出版: (2014)

The giant magnetocaloric effect in Gd5Si2Ge 2 with low purity gadolinium
由: Zhang, T., et al.
出版: (2014)

Surface third and fifth harmonic generation at crystalline Si for non-invasive inspection of Si wafer’s inter-layer defects
由: Gao, Yi, et al.
出版: (2019)

Characterization of silver selenide thin films grown on Cr-covered Si substrates
由: Mohanty, B.C., et al.
出版: (2014)

Experimental & computational studies on transition-metal silicides for novel applications in advance CMOS technologies
由: ZHAO FANGFANG
出版: (2010)

DSC analysis of the effect of processing technique on the dissolution/precipitation reactions in a hypereutectic Al-Si alloy
由: Gupta, M., et al.
出版: (2014)

Trung ngôn: Sĩ Tài hay Sĩ Tái?
由: Trai Quan
出版: (2021)

Theoretical study of elementary processes in silicon-germanium epitaxial growth on SI(100) and SI1-xGEx (100) surfaces
由: LI QIANG
出版: (2010)

Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes
由: Lin, C.Y., et al.
出版: (2014)

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
由: Wang, G.H., et al.
出版: (2014)

Adsorption and diffusion of Si on the Si(001): An empirical potential calculation
由: Cai, J., et al.
出版: (2014)

Laudato Si’
由: RAUSCH, S.J., THOMAS P.
出版: (2017)