Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs
10.1063/1.2840132
Saved in:
Main Authors: | Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82046 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate
by: Dalapati, G.K., et al.
Published: (2014) -
Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications
by: Dalapati, G.K., et al.
Published: (2014) -
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
by: Zhu, M., et al.
Published: (2014) -
Energy-band alignments of Hf O2 on p-GaAs substrates
by: Dalapati, G.K., et al.
Published: (2014) -
Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
by: Oh, H.J., et al.
Published: (2014)