Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

10.1109/TED.2011.2166077

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書目詳細資料
Main Authors:	Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Contact resistance fin field-effect transistor (FinFET) platinum silicide (PtSi) Schottky barrier silicon-carbon (Si:C) Tellurium (Te)
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82090
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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