Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

10.1109/TPEL.2013.2288644

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	مقال
منشور في:	2014
الموضوعات:	AlGaN/GaN high-electron mobility transistor (HEMT) current collapse field plate design GaN device modeling
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/82228
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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