Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

10.1063/1.1330252

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書目詳細資料
Main Authors:	Choi, W.K., Lee, L.P., Foo, S.L., Gangadharan, S., Chong, N.B., Tan, L.S.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82856
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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