Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts

• Main Authors: Tong, Y., Liu, B., Lim, P.S.Y., Zhou, Q., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84021
• Institution: National University of Singapore

10.1109/VLSI-TSA.2012.6210172