Silicon-carbon source/drain: Selective epitaxy, process integration, and transistor strain engineering

Silicon-carbon source/drain: Selective epitaxy, process integration, and transistor strain engineering

10.1149/1.2355908

Saved in:

Bibliographic Details
Main Author:	Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84181
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Planar and multiple-gate transistors with silicon-carbon source/drain
by: Yeo, Y.-C.
Published: (2014)

Strained silicon nanowire transistors with germanium source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
by: Madan, A., et al.
Published: (2014)

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
by: Chui, K.-J., et al.
Published: (2014)

Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions
by: Yeo, Y.-C., et al.
Published: (2014)

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
by: Ang, K.-W., et al.
Published: (2014)

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
by: Koh, S.-M., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
by: Wang, G.H., et al.
Published: (2014)

Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
by: Koh, S.-M., et al.
Published: (2014)

Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs
by: Koh, S.-M., et al.
Published: (2014)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR GERMANIUM-TIN AND SILICON-GERMANIUM TRANSISTORS
by: XU HAIWEN
Published: (2023)

Strained channel transistor using strain field induced by source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)

Carbon- and tin- Incorporated source/drain stressors for CMOS transistors
by: Yeo, Y.-C.
Published: (2014)

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
by: Tan, K.-M., et al.
Published: (2014)

A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
by: Toh, E.-H., et al.
Published: (2014)

Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
by: Wang, G.H., et al.
Published: (2014)

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
by: Ang, K.-W., et al.
Published: (2014)

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
by: Ang, K.-W., et al.
Published: (2014)

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
by: Ang, K.-W., et al.
Published: (2014)

Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering
by: Zhou, Q., et al.
Published: (2014)

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors
by: Ang, K.-W., et al.
Published: (2014)

Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions
by: Ang, K.-W., et al.
Published: (2014)

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors
by: Wong, H.-S., et al.
Published: (2014)

Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
by: Wang, G.H., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
by: Wang, G.H., et al.
Published: (2014)

Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)

Advanced source and drain contact engineering for multiple- gate transistors
by: LEE TEK PO RINUS
Published: (2010)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR FIELD-EFFECT TRANSISTORS
by: WU YING
Published: (2019)

Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
by: Zhou, Q., et al.
Published: (2014)

Source/drain germanium condensation for P-channel strained ultra-thin body transistors
by: Chui, K.-J., et al.
Published: (2014)

Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
by: Koh, S.-M., et al.
Published: (2014)

Strain Engineering for Advanced Silicon Transistors
by: DING YINJIE
Published: (2014)

Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors
by: Wang, G.H., et al.
Published: (2014)

Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
by: Ang, K.-W., et al.
Published: (2014)

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
by: Koh, S.-M., et al.
Published: (2014)

N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
by: Liow, T.-Y., et al.
Published: (2014)

n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport
by: Chui, K.-J., et al.
Published: (2014)

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
by: Koh, S.-M., et al.
Published: (2014)