Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process
10.1109/ICSICT.2006.306268
Saved in:
Main Authors: | Wang, X.P., Li, M.-F., Yu, H.Y., Ren, C., Loh, W.Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.Q., Kwong, D.L. |
---|---|
其他作者: | ELECTRICAL & COMPUTER ENGINEERING |
格式: | Conference or Workshop Item |
出版: |
2014
|
在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/84366 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
由: Wang, X.P., et al.
出版: (2014) -
Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
由: Ren, C., et al.
出版: (2014) -
Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
由: Wang, X.P., et al.
出版: (2014) -
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
由: Wang, X.P., et al.
出版: (2014) -
An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer
由: Park, C.S., et al.
出版: (2014)