In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
10.1063/1.3327834
Saved in:
Main Authors: | Chen, Q., Huang, H., Chen, W., Wee, A.T.S., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/94020 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
by: Chen, Q., et al.
Published: (2014) -
Band alignment and thermal stability of HfO2 gate dielectric on SiC
by: Chen, Q., et al.
Published: (2014) -
Photoemission study of energy-band alignment for RuOx/HfO 2/Si system
by: Li, Q., et al.
Published: (2014) -
Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation
by: Chen, Q., et al.
Published: (2014) -
Raman spectroscopy of epitaxial graphene on a SiC substrate
by: Ni, Z.H., et al.
Published: (2014)