Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement

by Wang, G.H., Toh, E.-H., Tung, C.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing

by Wang, G.H., Toh, E.-H., Foo, Y.-L., Tung, C.-H., Choy, S.-F., Samudra, G., Yeo, Y.-C.
Published 2014

Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance

by Toh, E.-H., Wang, G.H., Shen, C., Zhu, M., Chan, L., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Published 2014

Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

by Wang, G.H., Toh, E.-H., Toh, Hoe, K.M., Tripathy, S., Balakurnar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Device physics and design of a L-shaped germanium source tunneling transistor

by Low, K.L., Zhan, C., Han, G., Yang, Y., Goh, K.-H., Guo, P., Toh, E.-H., Yeo, Y.-C.
Published 2014

Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing

by Wang, G.H., Toh, E.-H., Tung, C.-H., Foo, Y.-L., Tripathy, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

On the performance limit of impact-ionization transistors

by Shen, C., Lin, J.-Q., Toh, E.-H., Chang, K.-F., Bait, P., Heng, C.-H., Samudra, G.S., Yeo, Y.-C.
Published 2014

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

by Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C.
Published 2014

A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance

by Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Published 2014

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

by Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C.
Published 2014

Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement

by Wang, G.H., Toh, E.-H., Weeks, D., Landin, T., Spear, J., Tung, C.H., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Published 2014

PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

by Han, G., Yang, Y., Guo, P., Zhan, C., Low, K.L., Goh, K.H., Liu, B., Toh, E.-H., Yeo, Y.-C.
Published 2014

Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+...

by Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Tau, K.C., Samudra, G., Yeo, Y.-C.
Published 2014

Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor

by Toh, E.-H., Wang, G.H., Chan, L., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Published 2014

A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

by Toh, E.-H., Wang, G.H., Lo, G.-Q., Balasubramanian, N., Tung, C.-H., Benistant, F., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swing

by Toh, E.-H., Wang, G.H., Weeks, D., Zhu, M., Bauer, M., Spear, J., Chan, L., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Published 2014

Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs

by Wang, G.H., Toh, E.-H., Chan, T.K., Osipowicz, T., Foo, Y.-L., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

by Wang, G.H., Toh, E.-H., Wang, X., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.-M., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing

by Toh, E.-H., Wang, G.H., Zhu, M., Shen, C., Chan, L., Lo, G.-Q., Tung, C.-H., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Published 2014

Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs

by Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.M., Balakumar, S., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014