Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress

Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress

Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor f...

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書目詳細資料
Main Authors:	Raghavan, Nagarajan, Padovani, Andrea, Li, Xiang, Bosman, Michel, Wu, Xing, Lip Lo, Vui, Larcher, Luca, Leong Pey, Kin
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/101175 http://hdl.handle.net/10220/18307
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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