A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation...

وصف كامل

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
مؤلفون آخرون:	School of Electrical and Electronic Engineering
التنسيق:	مقال
اللغة:	English
منشور في:	2020
الموضوعات:	Engineering::Electrical and electronic engineering III-nitrides Growth Si Substrate
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/143634
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

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