Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state

Multichannel high electron mobility transistor (MC-HEMT) heterostructures are one of the choices for improved power performance of GaN HEMTs. By comparing the experimentally obtained two-dimensional electron gas (2DEG) concentration of unintentionally doped (UID) AlGaN/GaN MC-HEMTs with simulated 2D...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili
مؤلفون آخرون:	School of Electrical and Electronic Engineering
التنسيق:	مقال
اللغة:	English
منشور في:	2023
الموضوعات:	Engineering::Electrical and electronic engineering Transistor Heterostructures Trap State
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/171425
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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