Electromigration reliability of copper interconnect in submicron microelectronics application
In this dissertation, the effects of temperature and interconnect properties on copper metallization electromigration are discussed. Accelerated Life Testing is used to obtain performance data on devices at a quicker rate.
Saved in:
Main Author: | Ang, Kian Ann |
---|---|
Other Authors: | Prasad, Krishnamachar |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/3326 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Investigating the electromigration reliability of copper interconnects
by: Shao, Wei
Published: (2010) -
Wafer level electromigration reliability study of deep submicron via for multilevel metallization
by: Loh, Wye Boon.
Published: (2008) -
A study on electromigration by driving force approach for submicron copper interconnect
by: Roy, Arijit
Published: (2008) -
Electromigration reliability study on copper interconnects under pulsed current conditions
by: Lim, Meng Keong
Published: (2015) -
Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects
by: Tan, Cher Ming, et al.
Published: (2009)