Fabrication of InGaP high electron mobility transistors by electron beam technique

Fabrication of InGaP high electron mobility transistors by electron beam technique

Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...

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محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Gay, Boon Ping.
مؤلفون آخرون:	Yoon, Soon Fatt
التنسيق:	Theses and Dissertations
منشور في:	2008
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
الوصول للمادة أونلاين:	http://hdl.handle.net/10356/4282
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	Nanyang Technological University

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