Fabrication of InGaP high electron mobility transistors by electron beam technique

Fabrication of InGaP high electron mobility transistors by electron beam technique

Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...

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書目詳細資料
主要作者:	Gay, Boon Ping.
其他作者:	Yoon, Soon Fatt
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	http://hdl.handle.net/10356/4282
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University

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