Impact of spike anneal on ultra shallow junction formation
This report explains the need for ultra shallow junctions for modern day CMOS devices, how spike anneal can help achieve this, reviews the important parameters if this process and how these parameters affect the performances of the CMOS transistors.
Saved in:
Main Author: | Lai, Chung Woh |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/4545 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies
by: Ong, Kuang Kian
Published: (2010) -
Rapid thermal annealing for ultra-shallow junction in deep submicron CMOS integrated circuits
by: Qin, Fei Tao
Published: (2009) -
Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement
by: Tan, Dexter Xueming.
Published: (2012) -
Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing
by: Wang, X. C., et al.
Published: (2013) -
Formation of Ultra-Shallow Junctions in Silicon- Germanium by Pulsed Laser Annealing
by: ABIDHA BEGUM
Published: (2010)