Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characterist...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan
مؤلفون آخرون:	School of Electrical and Electronic Engineering
التنسيق:	مقال
اللغة:	English
منشور في:	2013
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/96863 http://hdl.handle.net/10220/11617
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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