Strategy for TSV scaling with consideration on thermo-mechanical stress and acceptable delay
Based on the 2011 ITRS road map, the greater accessibility of higher number of TSVs in a specified area depends on the smarter miniaturization of the interconnect dimension in 3D IC packaging. Scaling down the TSV dimension has an inevitable effect on resistance, capacitance, signal transmission as...
Saved in:
Main Authors: | Zhang, J., Zhang, L., Dong, Y., Li, H. Y., Ghosh, Kaushik, Tan, Cher Ming, Xia, Guangrui, Tan, Chuan Seng |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
|
Online Access: | https://hdl.handle.net/10356/98846 http://hdl.handle.net/10220/12742 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Impact of TSV induced thermo-mechanical stress on semiconductor device performance
by: Lee, H.M., et al.
Published: (2014) -
Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief
by: Ghosh, Kaushik, et al.
Published: (2013) -
Dielectric quality of 3D capacitor embedded in through-silicon via (TSV)
by: Lin, Ye, et al.
Published: (2020) -
RF characterization and design of multi-TSV with embedded capacitor
by: Panwar, Neeraj, et al.
Published: (2020) -
The integration of grounding plane into tsv integrated ion trap for efficient thermal management in large scale quantum computing device
by: Zhao, Peng, et al.
Published: (2023)