Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

• المؤلفون الرئيسيون: Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98937; http://hdl.handle.net/10220/13454

An effective suppression of drain current collapse was realized in both Enhancement (E)-mode and Depletion (D)-mode AlGaN/GaN High-electron-mobility-transistors (HEMTs) on 4-inch Silicon (111) by ammonium sulfide [(NH4)2Sx] passivation. The current collapse was studied using the pulsed current-volta...