IMD TDDB (TIME DEPENDENCE DIELECTRIC BREAKDOWN) ON LOW-k DIELETRICS
Master's
Saved in:
Main Author: | HANDRA |
---|---|
Other Authors: | SINGAPORE-MIT ALLIANCE |
Format: | Theses and Dissertations |
Published: |
2019
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/153914 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
by: Bai, W., et al.
Published: (2014) -
Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects
by: Ngwan, V.C., et al.
Published: (2014) -
Dielectric reliability of copper/low-k interconnects
by: YIANG KOK YONG
Published: (2010) -
Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
by: Lee, S., et al.
Published: (2014) -
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
by: Wang, D.D, et al.
Published: (2020)