Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnects
10.1063/1.1688978
Saved in:
Main Authors: | Ngwan, V.C., Zhu, C., Krishnamoorthy, A. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55525 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Study of process dependent reliability in SiOC dielectric interconnects and film
by: Mok, T.S., et al.
Published: (2014) -
Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects
by: Ngwan, V.C., et al.
Published: (2014) -
Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects
by: Ngwan, V.C., et al.
Published: (2014) -
Mortality dependence of Cu dual damascene interconnects on adjacent segment
by: Chang, C.W., et al.
Published: (2014) -
Fabrication of polymer-derived SiOC/carbon composites using PμSL
by: Pek, Shaun Yue Zheng
Published: (2023)