Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications
10.1002/cvde.200506393
Saved in:
Main Authors: | Zhu, C., Cho, B.-J., Li, M.-F. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81987 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors for RF Applications
by: PHUNG THANH HOA
Published: (2012) -
High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics
by: Ding, S.-J., et al.
Published: (2014) -
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
by: Ding, S.-J., et al.
Published: (2014) -
Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
by: Chen, J.-D., et al.
Published: (2014) -
PVD HfO2 for high-precision MIM capacitor applications
by: Kim, S.J., et al.
Published: (2014)