Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction

Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction

10.1143/JJAP.50.04DF01

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Gong, X., Chin, H.-C., Koh, S.-M., Wang, L., Ivana, Zhu, Z., Wang, B., Chia, C.K., Yeo, Y.-C.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	مقال
منشور في:	2014
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/83039
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
بواسطة: Liu, B., وآخرون
منشور في: (2014)

In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
بواسطة: Zhu, Z., وآخرون
منشور في: (2014)

Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
بواسطة: Chin, H.-C., وآخرون
منشور في: (2014)

Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
بواسطة: Gong, X., وآخرون
منشور في: (2014)

Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
بواسطة: Subramanian, S., وآخرون
منشور في: (2014)

A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
بواسطة: Kong, E.Y.-J., وآخرون
منشور في: (2014)

Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
بواسطة: Chin, H.-C., وآخرون
منشور في: (2014)

CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
بواسطة: Ivana, وآخرون
منشور في: (2014)

Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
بواسطة: Ivana, وآخرون
منشور في: (2014)

Tin-incorporated source/drain and channel materials for field-effect transistors
بواسطة: Yeo, Y.-C., وآخرون
منشور في: (2014)

Planar and multiple-gate transistors with silicon-carbon source/drain
بواسطة: Yeo, Y.-C.
منشور في: (2014)

Carbon- and tin- Incorporated source/drain stressors for CMOS transistors
بواسطة: Yeo, Y.-C.
منشور في: (2014)

SOURCE AND DRAIN EXTERNAL RESISTANCE REDUCTION FOR ADVANCED TRANSISTORS
بواسطة: KOH SHAO MING
منشور في: (2012)

Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
بواسطة: Wang, G.H., وآخرون
منشور في: (2014)

Strained silicon nanowire transistors with germanium source and drain stressors
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

InGaAs N-MOSFETS with CMOS Compatible Source/Drain Technology and the Integration on Si Platform
بواسطة: IVANA
منشور في: (2013)

Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
بواسطة: Han, G., وآخرون
منشور في: (2014)

Advanced source and drain contact engineering for multiple- gate transistors
بواسطة: LEE TEK PO RINUS
منشور في: (2010)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR FIELD-EFFECT TRANSISTORS
بواسطة: WU YING
منشور في: (2019)

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
بواسطة: Madan, A., وآخرون
منشور في: (2014)

Strained channel transistor using strain field induced by source and drain stressors
بواسطة: Yeo, Y.-C., وآخرون
منشور في: (2014)

Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
بواسطة: Tan, Eu Jin, وآخرون
منشور في: (2013)

Source/drain germanium condensation for P-channel strained ultra-thin body transistors
بواسطة: Chui, K.-J., وآخرون
منشور في: (2014)

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

Silicon-carbon source/drain: Selective epitaxy, process integration, and transistor strain engineering
بواسطة: Yeo, Y.-C.
منشور في: (2014)

Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions
بواسطة: Yeo, Y.-C.
منشور في: (2014)

Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
بواسطة: Gao, F., وآخرون
منشور في: (2014)

Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions
بواسطة: Yeo, Y.-C., وآخرون
منشور في: (2014)

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors
بواسطة: Wong, H.-S., وآخرون
منشور في: (2014)

In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application
بواسطة: Loke, Wan Khai, وآخرون
منشور في: (2022)

Contact and source/drain engineering for advanced III-V field-effect transistors
بواسطة: KONG YU JIN EUGENE
منشور في: (2014)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR GERMANIUM-TIN AND SILICON-GERMANIUM TRANSISTORS
بواسطة: XU HAIWEN
منشور في: (2023)

III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
بواسطة: Chin, H.-C., وآخرون
منشور في: (2014)

Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
بواسطة: Subramanian, S., وآخرون
منشور في: (2014)

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
بواسطة: Wang, G.H., وآخرون
منشور في: (2014)

Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
بواسطة: Gao, F., وآخرون
منشور في: (2014)

New accurate model for drain-gate avalanche current source of GaAs MESFET
بواسطة: Xiao, Q., وآخرون
منشور في: (2014)

Source / Drain Engineering in InGaAs n-MOSFETs for Logic Device Applications
بواسطة: SUJITH SUBRAMANIAN
منشور في: (2014)