A hermetic seal using composite thin-film In/Sn solder as an intermediate layer and its interdiffusion reaction with Cu
10.1007/s11664-008-0561-x
Saved in:
Main Authors: | Yan, L.-L., Lee, C.-K., Yu, D.-Q., Yu, A.-B., Choi, W.-K., Lau, J.-H., Yoon, S.-U. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83352 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Characterization and reliability study of low temperature hermetic wafer level bonding using In/Sn interlayer and Cu/Ni/Au metallization
by: Yu, D.-Q., et al.
Published: (2014) -
Effect of amount of Cu on the intermetallic layer thickness between Sn-Cu solders and Cu substrates
by: Alam, M.E., et al.
Published: (2014) -
FE IMPACTS ON SOLDER JOINT PROPERTIES IN MICROELECTRONIC ASSEMBLY
by: LIN YITENG
Published: (2015) -
Correlation between intermetallic thickness and roughness during solder reflow
by: Zuruzi, A.S., et al.
Published: (2014) -
Study of Ag-In solder as low temperature wafer bonding intermediate layer
by: Made, R.I., et al.
Published: (2014)