Integrity of copper-tantalum nitride metallization under different ambient conditions
10.1149/1.1393526
Saved in:
Main Authors: | Yap, K.P., Gong, H., Dai, J.Y., Osipowicz, T., Chan, L.H., Lahiri, S.K. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/96947 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
by: Latt, K.M., et al.
Published: (2014) -
Study of copper diffusion into tantalum and tantalum diffusion into copper
by: Loh, S.W., et al.
Published: (2014) -
Electroless copper seed layer deposition on tantalum nitride barrier film
by: Chong, S. P., et al.
Published: (2012) -
Tantalum-based diffusion barriers for copper metallization
by: Khin Maung Latt.
Published: (2008) -
Quantitative studies of copper diffusion through Ultra-thin ALD tantalum nitride barrier films by high resolution-RBS
by: Ho, C.S., et al.
Published: (2014)