Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

by Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors

by Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

by Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H.
Published 2014

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

by Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

Pore sealing by NH3 plasma treatment of porous low dielectric constant films

by Peng, H.-G., Chi, D.-Z., Wang, W.-D., Li, J.-H., Zeng, K.-Y., Vallery, R.S., Frieze, W.E., Skalsey, M.A., Gidley, D.W., Yee, A.F.
Published 2014

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

by Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C., Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L.
Published 2014

Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

by Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Rahman, Md.A., Osipowicz, T., Tung, C.H.
Published 2014

Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs

by Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ho, C.-S., Hoe, K.-M., Lai, M.Y., Osipowicz, T., Lo, G.-Q., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

by Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Wong, H.-S., Lim, P.-C., Lai, D.M.Y., Lo, G.-Q., Tung, C.-H., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain

by Lee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced perf...

by Lee, R.T.-P., Koh, A.T.-Y., Fang, W.-W., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Chow, S.-Y., Yong, A.M., Hoong, S.W., Lo, G.-Q., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Thermal stability of (HfO2)x(Al2O 3)1-x on Si

by Yu, H.Y., Wu, N., Li, M.F., Zhu, C., Cho, B.J., Kwong, D.-L., Tung, C.H., Pan, J.S., Chai, J.W., Wang, W.D., Chi, D.Z., Ang, C.H., Zheng, J.Z., Ramanathan, S.
Published 2014

Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge

by Chia, C.K., Dalapati, G.K., Chai, Y., Lu, S.L., He, W., Dong, J.R., Seng, D.H.L., Hui, H.K., Wong, A.S.W., Lau, A.J.Y., Cheng, Y.B., Chi, D.Z., Zhu, Z., Yeo, Y.C., Xu, Z., Yoon, S.F.
Published 2014

Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing

by Lee, R.T.-P., Koh, A.T.-Y., Liu, F.-Y., Fang, W.-W., Liow, T.-Y., Tan, K.-M., Lim, P.-C., Lim, A.E.-J., Zhu, M., Hoe, K.-M., Tung, C.-H., Lo, G.-Q., Wang, X., Low, D.K.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014