Effects of prolonged annealing on NiSi at low temperature (500°C)

by Anisur, M.R., Osipowicz, T., Chi, D.Z., Wang, W.D.
Published 2014

An unequal-order radial interpolation meshless method for Biot's consolidation theory

by Wang, W.D., Wang, J.G., Wang, Z.L., Nogami, T.
Published 2014

Observation of a new kinetics to form Ni3Si2 and Ni31Si12 suicides at low temperature (200°C)

by Rahman, Md..A., Osipowicz, T., Chi, D.Z., Wang, W.D.
Published 2014

Evaluation of PECVD deposited boron nitride as copper diffusion barrier on porous low-k materials

by Liu, J., Wang, W.D., Wang, L., Chi, D.Z., Loh, K.P.
Published 2014

Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process

by Chen, Z., Wang, W. D., Xu, S., Law, S. B., Ee, Elden Yong Chiang, Chi, Dong Zhi
Published 2012

Growth and characterization of UHV sputtering HfO2film by plasma oxidation and low temperature annealing

by Li, Q., Ong, C.K., Wang, S.J., Wang, W.D., Chi, D.Z., Huan, A.C.H.
Published 2011

Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

by Yu, X., Zhu, C., Li, M.F., Chin, A., Du, A.Y., Wang, W.D., Kwong, D.-L.
Published 2014

Effects of Si(001) surface amorphization on ErSi2 thin film

by Tan, E.J., Kon, M.L., Pey, K.L., Lee, P.S., Zhang, Y.W., Wang, W.D., Chi, D.Z.
Published 2014

Effects of Si(001) surface amorphization on ErSi2 thin film

by Pey, Kin Leong, Lee, Pooi See, Tan, Eu Jin, Kon, M. L., Zhang, Y. W., Wang, W. D., Chi, Dong Zhi
Published 2013

High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

by Yu, X., Zhu, C., Wang, X.P., Li, M.F., Chin, A., Du, A.Y., Wang, W.D., Kwong, D.-L.
Published 2014

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack

by Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L.
Published 2014

Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing

by Liew, S.L., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Wang, W.D., Lee, K.Y., Ho, C.S., Osipowicz, T., Chi, D.Z.
Published 2014

Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering

by Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L.
Published 2014

Pore sealing by NH3 plasma treatment of porous low dielectric constant films

by Peng, H.-G., Chi, D.-Z., Wang, W.-D., Li, J.-H., Zeng, K.-Y., Vallery, R.S., Frieze, W.E., Skalsey, M.A., Gidley, D.W., Yee, A.F.
Published 2014

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

by Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C., Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L.
Published 2014

Thermal stability of (HfO2)x(Al2O 3)1-x on Si

by Yu, H.Y., Wu, N., Li, M.F., Zhu, C., Cho, B.J., Kwong, D.-L., Tung, C.H., Pan, J.S., Chai, J.W., Wang, W.D., Chi, D.Z., Ang, C.H., Zheng, J.Z., Ramanathan, S.
Published 2014