Reverse short channel effects in nMOSFETs

Reverse short channel effects in nMOSFETs

Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen the approach of the 0.18um technology. However, this has caused phenomena that had not been previously observed. Two of these are the Reverse Short Channel Effects (RSCE) and the Transient Enhanced D...

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書目詳細資料
主要作者:	Lee, Teck Koon.
其他作者:	Liu Po-Ching
格式:	Theses and Dissertations
語言:	English
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	http://hdl.handle.net/10356/13234
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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