Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs)

Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs)

GaN-based devices are wide bandgap semiconductor materials that are poised to supersede Si-based devices in power electronics and high frequency applications. GaN-based HEMTs have emerged as a forefront choice among other materials due to its high breakdown electric field, saturation velocity and th...

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書目詳細資料
主要作者:	Ong, Zi Kai
其他作者:	Ng Geok Ing
格式:	Final Year Project
語言:	English
出版:	Nanyang Technological University 2020
主題:	Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	https://hdl.handle.net/10356/140651
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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