Regrown ohmic contact to GaN-based high electron mobility transistors

Regrown ohmic contact to GaN-based high electron mobility transistors

GaN-based High Electron Mobility Transistors have been of great interest for applications in high temperature, high frequency, high speed, and high power devices. GaN-based HEMTs have properties like wide bandgap, high saturation, and high critical breakdown field, making them favourable for further...

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書目詳細資料
主要作者:	Tan, Eleen
其他作者:	Radhakrishnan K
格式:	Final Year Project
語言:	English
出版:	Nanyang Technological University 2023
主題:	Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/167696
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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