Growth and characterization of metamorphic layer structures for high electron mobility transistors

Growth and characterization of metamorphic layer structures for high electron mobility transistors

InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desira...

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書目詳細資料
主要作者:	Yuan, Kaihua.
其他作者:	Radhakrishnan, K.
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	http://hdl.handle.net/10356/3913
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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