Studies of gallium nitride high electron mobility transistors

Studies of gallium nitride high electron mobility transistors

Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that possesses many unique properties, which pushes semiconductor device performances to newer limits. This has been attracting attention in both the engineering field and the commercial semiconductor industry. With the abili...

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書目詳細資料
主要作者:	Goh, Basil Yan Kun
其他作者:	School of Electrical and Electronic Engineering
格式:	Final Year Project
語言:	English
出版:	2016
主題:	DRNTU::Engineering
在線閱讀:	http://hdl.handle.net/10356/67994
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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