Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain cu...

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書目詳細資料
Main Authors:	Gu, Enyao, Hu, Guangxi, Xiang, Ping, Liu, Ran, Wang, Lingli, Zhou, Xing
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2016
主題:	semiconductor analytical
在線閱讀:	https://hdl.handle.net/10356/82172 http://hdl.handle.net/10220/41136 http://www.pphmj.com/abstract/8431.htm
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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